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GeneSiC’s G3R™ SiC MOSFETs feature industry leading performance in high-voltage switching to harness never before seen levels of efficiency, high temperature operation and system reliability.
Features:
- G3R™ Technology for +15 V Gate Drive
- Superior QG x RDS(ON) Figure of Merit
- Low Gate Charge and Device Capacitances
- Low Conduction Losses at High Temperature
- Superior Avalanche and Short Circuit Ruggedness
- Normally-off Stable Operation up to 175°C
- Fast and Reliable Body Diode
- Optimized Packaging with Kelvin Source Connection
Benefits:
- Superior Cost-Performance Index
- Increased Power Density for Compact System
- Low Internal RG for High Switching Frequency Operation
- Reduced Losses for Higher System Efficiency
- Minimized Gate Ringing
- Improved Thermal Capabilities
- Simple to Drive
- Ease of Paralleling without Thermal Runaway
Applications:
- Electric Vehicles – Power Train and Charging
- Solar Inverters and Energy Storage
- Smart Grid and HVDC
- Motor Drives
- High Voltage DC-DC and AC-DC Converters
- Induction Heating and Welding
- Switched Mode Power Supplies
- Pulsed Power Applications
750V SiC MOSFET
1200V SiC MOSFET
1700V SiC MOSFET
3300V SiC MOSFET
6500V SiC MOSFET