GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products.
GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources.
GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2022.
Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.
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Dr. Ranbir Singh founded GeneSiC Semiconductor Inc. in 2004. Prior to that he conducted research on SiC power devices first at Cree Inc, and then at the NIST, Gaithersburg, MD. He has developed critical understanding and published on a wide range of SiC power devices including PiN, JBS and Schottky diodes, MOSFETs, IGBTs, Thyristors and field controlled thyristors. He received his Ph.D. and MS degrees in Electrical and Computer Engineering, from North Carolina State University, Raleigh, NC, and B. Tech from Indian Institute of Technology, Delhi. In 2012, EE Times named Dr. Singh as among "Forty Innovators building the foundations of next generation electronics industry." In 2011, he won the R&D100 award towards his efforts in commercializing 6.5kV SiC Thyristors. He has published over 200 journal and conference papers, is an author on over 30 issued US patents, and has authored a book.
Vice-President of Technology
Dr. Siddarth Sundaresan is GeneSiC's Vice-President of Technology. He received his M.S. and Ph.D. degrees in Electrical Engineering from George Mason University in 2004 and 2007, respectively. Dr. Sundaresan has published more than 65 technical articles and conference proceedings on device, materials and processing aspects of power devices fabricated on SiC and GaN. He has served on the technical program committee of the International Conference on SiC and Related Materials (ICSCRM) and is a current technical committee member for the International Symposium on Power Semiconductor Devices and ICs (ISPSD).