SiC Schottky Diodes em SMB (DO-214) pacotes oferecem pegadas menores
Alta voltagem, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities Dulles, Virgínia., Nov 19, 2013 —…
Retificadores Schottky de Carbeto de Silício estendidos para 3300 Taxas de tensão
High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages Thief River Falls/Dulles, Virgínia., Posso 28, 2013 — GeneSiC Semiconductor, uma…
Carbeto de Silício Bare Die até 8000 V Ratings de GeneSiC
High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching Dulles, Virgínia., Nov 7, 2013 — GeneSiC Semiconductor, a pioneer and…
Os módulos híbridos SiC Schottky Rectifier/Si IGBT da GeneSiC permitem operação a 175°C
DULLES, VA, Março 5, 2013 — GeneSiC Semiconductor, um fornecedor pioneiro e global de uma ampla gama de carboneto de silício (SiC) power semiconductors today announces the immediate availability of its…
GeneSiC apresenta transistores de junção de carboneto de silício
DULLES, VA, Fevereiro 25, 2013 — GeneSiC Semiconductor, um fornecedor pioneiro e global de uma ampla gama de carboneto de silício (SiC) power semiconductors today announces the immediate availability of a…