GeneSiC introduces Silicon Carbide Junction Transistors

MGA DULLES, VA, Pebrero 25, 2013 — GeneSiC Semiconductor, isang pioneer at pandaigdigang supplier ng malawak na hanay ng Silicon Carbide (Sic) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, Telecom at Networking Power Supplies, walang putol na suplay ng kuryente, solar inverters, industrial motor control systems, and downhole applications.

Junction Transistors inaalok ng GeneSiC exhibit ultra-mabilis na paglipat ng kakayahan, isang parisukat na reverse biased ligtas na lugar ng operasyon (RBSOA), pati na rin ang temperatura independiyenteng panandaliang pagkawala ng enerhiya at paglipat ng mga oras. Ang mga switch na ito ay gate-oxide libreng, normal-off, eksibit positibong temperatura co-mahusay na ng on-pagtutol, at may kakayahang itaboy ng komersyal na, karaniwang magagamit 15 V IGBT gate driver, hindi tulad ng iba pang mga SiC switch. Habang nag-aalok ng pagiging tumutugma sa SiC JFET driver, Junction Transistors can be easily paralleled because of their matching transient characteristics.

As power system designers continue to push the limits of operating frequency, habang pa rin demanding mataas na circuit kahusayan, the need SiC switches which can offer a standard of performance and production uniformity. Paggamit ng natatanging aparato at tela makabagong-likha, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” sinabi Dr. rantso singh , Pangulo ng GeneSic Semiconductor.

1700 V Junction Transistor Technical Highlights

  • Tatlong handog – 110 mOhms (GA16JT17-247); 250 mOhms (GA08JT17-247); at 500 mOhms (GA04JT17-247)
  • Tjmax = 175°C
  • Turn On/Off Rise/Fall Times <50 nanoseconds karaniwang.

1200 V Junction Transistor Technical Highlights

  • Two offerings – 220 mOhms (GA06JT12-247); at 460 mOhms (GA03JT12-247)
  • Tjmax = 175°C
  • Turn On/Off Rise/Fall Times <50 nanoseconds karaniwang

Lahat ng device ay 100% sinubukan sa buong boltahe / kasalukuyang mga rating at bahay sa Halogen-Free, RoHS komplikadong TO-247 pakete. Ang mga device ay agad makukuha mula sa Awtorisadong Distributor ng GeneSic.