5th Generation 650V SiC Schottky MPS™ Diodes for Best-in-Class Efficiency

DULLES, VA, May 28, 2021 — GeneSiC Semiconductor, a pioneer and global supplier of Silicon Carbide (SiC) power semiconductor devices, announces the availability of 5th generation (GE*** series) SiC Schottky MPS™ rectifiers that are setting up a new benchmark with their superior price-performance index, industry-leading surge current and avalanche robustness, and high quality manufacturing.

“GeneSiC was one of the first SiC manufacturers to commercially supply SiC Schottky rectifiers in 2011. After more than a decade of supplying high-performance and high-quality SiC rectifiers in the industry, we are excited to release our 5th generation of SiC Schottky MPS™ (Merged-PiN-Schottky) diodes that offer industry-leading performance in all aspects to meet the high efficiency and power density goals in applications like server/telecom power supplies and battery chargers. The revolutionary feature that makes our 5th Generation (GE*** series) SiC Schottky MPS™ diodes stand out among its peers is the low built-in voltage (also known as knee-voltage);it enables lowest diode conduction losses at all load conditions – crucial for applications demanding high-efficiency energy usage. In contrast to other competitor SiC diodes also designed to offer low-knee characteristics, an additional feature of our Gen5 diode designs is that they still maintain that high level of avalanche (UIL) ruggedness that our customers have come to expect from GeneSiC’s Gen3 (GC*** series) and Gen4 (GD*** series) SiC Schottky MPS™” said Dr. Siddarth Sundaresan, Vice President of Technology at GeneSiC Semiconductor.

Features –

  • Low Built-In Voltage – Lowest Conduction Losses for All Load Conditions
  • Superior Figure of Merit – QC x VF
  • Optimal Price Performance
  • Enhanced Surge Current Capability
  • 100% Avalanche (UIL) Tested
  • Low Thermal Resistance for Cooler Operation
  • Zero Forward and Reverse Recovery
  • Temperature Independent Fast Switching
  • Positive Temperature Coefficient of VF

Applications –

  • Boost Diode in Power Factor Correction (PFC)
  • Server and Telecom Power Supplies
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Battery Chargers
  • Freewheeling / Anti-parallel Diode in Inverters

GE04MPS06E – 650V 4A TO-252-2 SiC Schottky MPS™

GE06MPS06E – 650V 6A TO-252-2 SiC Schottky MPS™

GE08MPS06E – 650V 8A TO-252-2 SiC Schottky MPS™

GE10MPS06E – 650V 10A TO-252-2 SiC Schottky MPS™

GE04MPS06A – 650V 4A TO-220-2 SiC Schottky MPS™

GE06MPS06A – 650V 6A TO-220-2 SiC Schottky MPS™

GE08MPS06A – 650V 8A TO-220-2 SiC Schottky MPS™

GE10MPS06A – 650V 10A TO-220-2 SiC Schottky MPS™

GE12MPS06A – 650V 12A TO-220-2 SiC Schottky MPS™

GE2X8MPS06D – 650V 2x8A TO-247-3 SiC Schottky MPS™

GE2X10MPS06D – 650V 2x10A TO-247-3 SiC Schottky MPS™

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

For datasheet and other resources, visit – www.genesicsemi.com/sic-schottky-mps/ or contact sales@genesicsemi.com

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.