GeneSiC introduserer Silicon Carbide Junction Transistorer
DULLES, VA, februar 25, 2013 — GeneSiC Semiconductor, en pioner og global leverandør av et bredt utvalg av silisiumkarbid (SiC) power semiconductors today announces the immediate availability of a…
Ny fysikk lar tyristor nå høyere nivå
DULLES, VA, august 30, 2011 – New Physics Lets Thyristors Reach Higher Level An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable…
GeneSiC vinner prestisjetunge R&D100 Award for SiC-enheter i netttilkoblede sol- og vindenergiapplikasjoner
DULLES, VA, juli 14, 2011 — R&D Magazine har valgt GeneSiC Semiconductor Inc. av Dulles, VA som mottaker av det prestisjetunge 2011 R&D 100 Award for the commercialization of…
GeneSiC Semiconductor Selected to Showcase Technology at 2011 ARPA-E Energy Innovation Summit
DULLES, VA, februar 28, 2011 – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the Department of…
GeneSiC wins power management project from NASA in support of future Venus exploration missions
DULLES, VA, desember 14, 2010 – GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of…