SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints
High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities Dulles, Virginia., Nov 19, 2013 —…
Silicon Carbide Schottky Rectifiers extended to 3300 Volt ratings
High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages Thief River Falls/Dulles, Virginia., May 28, 2013 — GeneSiC Semiconductor, a…
Silicon Carbide Bare Die up to 8000 V Ratings from GeneSiC
High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching Dulles, Virginia., Nov 7, 2013 — GeneSiC Semiconductor, a pioneer and…
Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation
DULLES, VA, March 5, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its…
GeneSiC introduces Silicon Carbide Junction Transistors
DULLES, VA, February 25, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a…