General Purpose High Temperature SiC Transistors and Rectifiers Offered at Low Cost
High Temperature (>210oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole…
Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released
Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation DULLES,…
GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors
SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits Dulles, Virginia., Oct 28, 2014 — GeneSiC Semiconductor, a pioneer and global supplier…
GeneSiC Supports Google/IEEE’s Little Box Challenge
GeneSiC’s SiC Transistor and Rectifiers offer significant advantages towards achieving the goals of the Little Box Challenge State-Of-the Art. Silicon Carbide Power Transistors & Rectifiers. Available. Now! GeneSiC has a…
High Temperature (210 C) SiC Junction Transistors offered in hermetic packages
The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies Dulles, Virginia., Dec 10, 2013 — GeneSiC…