GeneSiC wins $2.53M from ARPA-E towards development of Silicon Carbide Thyristor-based devices
DULLES, VA, September 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel…
Renewable Energy Thrust Nets GeneSiC Semiconductor $1.5M from US Department of Energy
DULLES, VA, November 12, 2008 – The US Department of Energy has awarded GeneSiC Semiconductor two separate grants totaling $1.5M for the development of high-voltage silicon carbide (SiC) devices that…
Commercial Impact of Silicon Carbide
Sept, 2008Commercial Impact of Silicon Carbide
GeneSiC Semiconductor Awarded Multiple US Department of Energy SBIR and STTR Grants
DULLES, VA, October 23, 2007 — GeneSiC Semiconductor Inc., a fast-rising innovator of high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices, announced that is has been awarded three separate…