A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Aug, 2008A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
High-current capable 650V, 1200V and 1700V SiC Schottky MPS™ diodes in mini-module SOT-227 package
DULLES, VA, May 11, 2019 — GeneSiC becomes a market leader in high-current capable (100 A and 200 A) SiC schottky diodes in SOT-227 mini-module GeneSiC has introduced GB2X50MPS17-227, GC2X50MPS06-227…
GeneSiC releases industry’s best performing 1700V SiC Schottky MPS™ diodes
DULLES, VA, January 7, 2019 — GeneSiC releases a comprehensive portfolio of its third generation 1700V SiC Schottky MPS™ diodes in TO-247-2 package GeneSiC has introduced GB05MPS17-247, GB10MPS17-247, GB25MPS17-247 and…
GeneSiC Interviewed at PCIM 2016 in Nuremberg, Germany
Power System Design Interviews GeneSiC Nuremberg, Germany May 12, 2016 — GeneSiC Semiconductor’s President was interviewed by Alix Paultre of Power Systems Design (https://www.powersystemsdesign.com/psdcast-ranbir-singh-of-genesic-on-their-latest-silicon-carbide-tech/67) at the PCIM show in Nuremberg,…
All-Silicon Carbide Junction Transistors-Diodes offered in a 4 Leaded mini-module
Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters DULLES, VA, May 13, 2015…