A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Aug, 2008A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Mataas na kasalukuyang may kakayahang 650V, 1200V at 1700V Sic Schotky MPS™ diodes sa mini-module SOT-227 pakete
MGA DULLES, VA, Mayo 11, 2019 — Ang GeneSiC ay nagiging isang lider ng merkado sa mataas na kasalukuyang may kakayahang (100 A at 200 Isang) SiC schottky diodes in SOT-227 mini-module GeneSiC has introduced GB2X50MPS17-227, GC2X50MPS06-227…
GeneSic release industriya pinakamahusay na gumaganap 1700V Sic Schottky MPS™ diodes
MGA DULLES, VA, Enero 7, 2019 — GeneSiC releases a comprehensive portfolio of its third generation 1700V SiC Schottky MPS™ diodes in TO-247-2 package GeneSiC has introduced GB05MPS17-247, GB10MPS17-247, GB25MPS17-247 and…
GeneSic interbyu sa PCIM 2016 sa Nuremberg, Alemanya
Power System Design Interviews GeneSiC Nuremberg, Alemanya Mayo 12, 2016 — GeneSiC Semiconductor President ay ininterbyu ni Alix Paultre ng Power Systems Disenyo (https://www.powersystemsdesign.com/psdcast-ranbir-singh-of-genesic-on-their-latest-silicon-carbide-tech/67) sa PCIM ipakita sa Nuremberg,…
Lahat-ng-Silicon Carbide Junction Transistors-Diodes inaalok sa isang 4 Humantong mini-module
Co-pakete SiC Transistor-Diode kumbinasyon sa isang matibay, nakahiwalay, 4-Namuno, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters DULLES, VA, Mayo 13, 2015…
