GeneSiC nanalo $2.53M mula sa ARPA-E patungo sa pag-unlad ng Silicon Carbide Thyristor-based na aparato
MGA DULLES, VA, Setyembre 28, 2010 – Advanced na Pananaliksik Proyekto Ahensiya – Enerhiya (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel…
Renewable Enerhiya Thrust Nets GeneSic Semiconductor $1.5M mula sa US Department of Energy
MGA DULLES, VA, Nobyembre 12, 2008 – Ang US Department of Energy ay iginawad GeneSic Semiconductor dalawang magkahiwalay na grants kabuuang $1.5M para sa pagbuo ng mataas na boltahe silicon carbide (Sic) devices that…
Commercial Impact of Silicon Carbide
Set, 2008Commercial Impact of Silicon Carbide
GeneSic Semiconductor Iginawad maramihang US Department of Energy SBIR at STTR Grants
MGA DULLES, VA, Oktubre 23, 2007 — GeneSiC Semiconductor Inc., isang mabilis-tumataas na makabagong-likha ng mataas na temperatura, mataas na kapangyarihan at ultra-boltahe silicon carbide (Sic) mga kagamitan, announced that is has been awarded three separate…