May, 2012 SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability

Oct, 2012 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

May, 2013 10 kV SiC BJTs – static, switching and reliability characteristics

Oct, 2013 Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation

Apr, 2014 Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation