Application Notes:
AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
Oct 2010 AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
Oct 2010 AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
AN1001 SiC Power Diode Reliability
September, 2018AN1001 SiC Power Diode Reliability
AN1002 Understanding the Datasheet of a SiC Power Schottky Diode
September, 2018AN1002 Understanding the Datasheet of a SiC Power Schottky Diode
AN1003 SPICE Model Usage Instructions
December, 2018AN1003 SPICE Model Usage Instructions
Technical Articles:
High Power SiC PiN Rectifiers
Dec, 2005 High Power SiC PiN Rectifiers
High power SiC PiN rectifiers
Jun, 2007 High power SiC PiN rectifiers
Fast Neutron Detection With Silicon Carbide Semi-insulating Detectors
Jun, 2008 Fast Neutron Detection With Silicon Carbide Semi-insulating Detectors
Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Oct, 2008 Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes
Sept, 2010 Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes
