Power Electronics Technology
Luty, 2012 – SiC: A Rugged Power Semiconductor Compound To Be Reckoned With
Power Electronics Technology (Pg 21)
listopad, 2011 – SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance
Systemy zasilania Bodo (Pg 36)
Październik, 2011 – Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors
Power Electronics Technology (Pg 36)
lipiec, 2011 – 1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses
Systemy zasilania Bodo (Pg 46)
Może, 2011 – 1200 V / 100 A Si IGBT / SiC Diode Copack do zastosowań energoelektronicznych