15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation
Mar, 2013 15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation
AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
Oct 2010 AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
Oct 2010 AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
AN1001 SiC Power Diode Reliability
September, 2018AN1001 SiC Power Diode Reliability
AN1002 Understanding the Datasheet of a SiC Power Schottky Diode
September, 2018AN1002 Understanding the Datasheet of a SiC Power Schottky Diode