Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Apr, 2014 Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
Jun, 2014 Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concep
May 2013 AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept
AN-10B Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept
June 2013 AN-10B Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept
Double Pulse Switching Board
Sep 2014 Double Pulse Switching Board