Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Oktubre, 2008 Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes
Set, 2010 Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes
Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers
Set, 2011 Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers
12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
Set, 2011 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with lowest-in-class junction capacitance
Hulyo, 2012 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with lowest-in-class junction capacitance