Silicon Carbide Junction Transistors at Schotky Rectifiers optimize para sa 250 °C operasyon
Abr, 2014 Silicon Carbide Junction Transistors at Schotky Rectifiers optimize para sa 250 °C operasyon
Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
Jun, 2014 Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
AN-10A Pagmamaneho SiC Junction Transistors (SJT) sa mga Off the Shelf Silicon IGBT Gate Driver: Isang-Antas ng Drive Concep
Mayo 2013 AN-10A Pagmamaneho SiC Junction Transistors (SJT) sa mga Off the Shelf Silicon IGBT Gate Driver: Konsepto ng Pagmamaneho sa Isang Antas
AN-10B Pagmamaneho SiC Junction Transistors (SJT): Konsepto ng Dalawang Antas na Gate Drive
Hunyo 2013 AN-10B Pagmamaneho SiC Junction Transistors (SJT): Konsepto ng Dalawang Antas na Gate Drive
Lupon ng Double Pulse Switching
Sep 2014 Lupon ng Double Pulse Switching