Multi-kHz, Ultra-Mataas na Boltahe Silicon Carbide Thyristors sample sa US Mananaliksik
MGA DULLES, VA, Nobyembre 1, 2010 –Sa una sa kanyang uri ng handog, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power…
GeneSiC nanalo $2.53M mula sa ARPA-E patungo sa pag-unlad ng Silicon Carbide Thyristor-based na aparato
MGA DULLES, VA, Setyembre 28, 2010 – Advanced na Pananaliksik Proyekto Ahensiya – Enerhiya (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel…
Renewable Enerhiya Thrust Nets GeneSic Semiconductor $1.5M mula sa US Department of Energy
MGA DULLES, VA, Nobyembre 12, 2008 – Ang US Department of Energy ay iginawad GeneSic Semiconductor dalawang magkahiwalay na grants kabuuang $1.5M para sa pagbuo ng mataas na boltahe silicon carbide (Sic) devices that…
GeneSic Semiconductor Iginawad maramihang US Department of Energy SBIR at STTR Grants
MGA DULLES, VA, Oktubre 23, 2007 — GeneSiC Semiconductor Inc., isang mabilis-tumataas na makabagong-likha ng mataas na temperatura, mataas na kapangyarihan at ultra-boltahe silicon carbide (Sic) mga kagamitan, announced that is has been awarded three separate…