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Home > Thyristors Technicals > 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

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    Stud Rectifier
Home > Thyristors Technicals > 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

SiC Products

  • SiC MOSFET
  • SiC Schottky MPS™
  • Custom Products

Silicon Products

  • Bridge Rectifier
  • Rectifier Module
  • Stud Rectifier
For the most updated datasheets and product information regarding SILICON PRODUCTS, please visit www.diodemodule.com
Posted on 2019-06-102019-06-10 by Editor0

1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

  • Nov, 2011
    1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
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