GeneSiC’s Industry Leading 6.5kV SiC MOSFETs – the Vanguard for a New Wave of Applications


DULLES, VA, October 20, 2020 — GeneSiC’s releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure.

GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors, today announces the immediate availability of 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL. Full SiC modules utilizing this technology are soon to be released. Applications are expected to include traction, pulsed power, smart grid infrastructure and other medium-voltage power converters.

G2R300MT65-CAL – 6.5kV 300mΩ G2R™ SiC MOSFET Bare Chip

G2R325MS65-CAL – 6.5kV 325mΩ G2R™ SiC MOSFET (with Integrated-Schottky) Bare Chip

G2R100MT65-CAL – 6.5kV 100mΩ G2R™ SiC MOSFET Bare Chip

GeneSiC’s innovation features a SiC double-implanted metal oxide semiconductor (DMOSFET) device structure with a junction barrier schottky (JBS) rectifier integrated into the SiC DMOSFET unit cell. This leading-edge power device can be used in a variety of power conversion circuits in the next generation of power conversion systems. Other significant advantages include more efficient bi-directional performance, temperature independent switching, low switching and conduction losses, reduced cooling requirements, superior long-term reliability, ease of paralleling devices and cost benefits. GeneSiC’s technology offers superior performance and also has the potential to reduce the net SiC material footprint in power converters.

“GeneSiC’s 6.5kV SiC MOSFETs are designed and fabricated on 6-inch wafers to realize low on-state resistance, highest quality, and superior price-performance index. This next-generation MOSFETs technology promises exemplar performance, superior ruggedness and long-term reliability in medium-voltage power conversion applications.” said Dr. Siddarth Sundaresan, VP of Technology at GeneSiC Semiconductor.

GeneSiC’s 6.5kV G2R™ SiC MOSFET technology features –

  • High avalanche (UIS) and short circuit ruggedness
  • Superior QG x RDS(ON) figure of merit
  • Temperature independent switching losses
  • Low capacitances and low gate charge
  • Low losses at all temperatures
  • Normally-off stable operation up to 175°C
  • +20 V / -5 V gate drive

For datasheet and other resources, visit – or contact

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

GeneSiC releases industry’s best performing 1700V SiC Schottky MPS™ diodes

DULLES, VA, January 7, 2019 — GeneSiC releases a comprehensive portfolio of its third generation 1700V SiC Schottky MPS™ diodes in TO-247-2 package

GeneSiC has introduced GB05MPS17-247, GB10MPS17-247, GB25MPS17-247 and GB50MPS17-247; the industry’s best performing 1700V SiC diodes available in the popular TO-247-2 through-hole package. These 1700V SiC diodes replace silicon-based ultra-fast recovery diodes and other old generation 1700V SiC JBS, enabling engineers to build switching circuits with greater efficiency and higher power density. Applications are expected to include electric vehicle fast chargers, motor drives, transportation power supplies and renewable energy.

GB50MPS17-247 is a 1700V 50A SiC merged-PiN-schottky diode, the industry’s highest current rated discrete SiC power diode. These newly released diodes feature low forward voltage drop, zero forward recovery, zero reverse recovery, low junction capacitance and are rated for a maximum operating temperature of 175°C. GeneSiC’s third generation SiC schottky diode technology provides industry leading avalanche ruggedness and surge current (Ifsm) robustness, combined with high quality automotive qualified 6-inch foundry and advanced high reliability discrete assembly technology.

These SiC diodes are pin-compatible direct replacements to other diodes available in the TO-247-2 package. Benefitting from their lower power losses (cooler operation) and high frequency switching capability, designers can now achieve greater conversion efficiency and greater power density in designs.

About GeneSiC Semiconductor, Inc.

GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration. GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense. GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting