New Physics Lets Thyristor Reach Higher Level

DULLES, VA, August 30, 2011 – New Physics Lets Thyristors Reach Higher Level

An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable power flow. Until now, silicon-based assemblies have been relied upon, but they have been unable to handle the requirements of the smart grid. Wide-band-gap materials such as silicon carbide (SiC) offer a better alternative as they are capable of higher switching speeds, a higher breakdown voltage, lower switching losses, and a higher junction temperature than traditional silicon-based switches. The first such SiC-based device to reach market is the Ultra-high-voltage Silicon Carbide Thyristor (SiC Thyristor), developed by GeneSiC Semiconductor Inc., Dulles, Va., with support from Sandia National Laboratories, Albuquerque, N.M., the U.S. Department of Energy/Electricity Delivery, and the U.S. Army/Armament Research, Development and Engineering Center, Picatinny Arsenal, N.J.

The developers adopted a different operational physics for this device, which operates on minority carrier transportation and an integrated third terminal rectifier, which is one more than other commercial SiC devices. Developers adopted a new fabrication technique that supports ratings above 6,500 V, as well as a new gate-anode design for high-current devices. Capable of performing at temperatures up to 300 C and current at 80 A, the SiC Thyristor offers up to 10 times higher voltage, four times higher blocking voltages, and 100 times faster switching frequency than silicon-based thyristors.

GeneSiC wins the prestigious R&D100 Award for SiC Devices in Grid-connected Solar and Wind Energy Applications

DULLES, VA, July 14, 2011 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2011 R&D 100 Award for the commercialization of Silicon Carbide devices with high voltage ratings.

GeneSiC Semiconductor Inc, a key innovator in the Silicon Carbide based power devices was honored last week with the announcement that it has been awarded the prestigious 2011 R&D 100 Award. This award recognizes GeneSiC for introducing one of the most significant, newly introduced research and development advances among multiple disciplines during 2010. R&D Magazine recognized GeneSiC’s Ultra-High Voltage SiC Thyristor for its ability to achieve blocking voltages and frequencies never utilized before towards power electronics demonstrations. The voltage ratings of >6.5kV, on-state current rating of 80 A and operating frequencies of >5 kHz are much higher than those previously introduced in the marketplace. These capabilities achieved by GeneSiC’s Thyristors critically enable power electronics researchers to develop grid-tied inverters, Flexible

AC Transmission Systems (FACTS) and High Voltage DC Systems (HVDC). This will allow new inventions and product developments within renewable energy, solar inverters, wind power inverters, and energy storage industries. Dr. Ranbir Singh, President of GeneSiC Semiconductor comented “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and pulsed power capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” Since this product was launched in October 2010, GeneSiC has booked orders from multiple customers towards demonstration of advanced power electronics hardware using these Silicon Carbide Thyristors. GeneSiC continues to develop its family of Silicon Carbide Thyristor products. The R&D on early version for power conversion applications were developed through SBIR funding support from US Dept. of Energy. More advanced, Pulsed Power optimized SiC Thyristors are being developed under another SBIR contract with ARDEC, US Army. Using these technical developments, internal investment from GeneSiC and commercial orders from multiple customers, GeneSiC was able to offer these UHV Thyristors as commercial products.

The 49th annual technology competition run by R&D Magazine evaluated entries from various companies and industry players, research organizations and universities around the world. The magazine’s editors and a panel of outside experts served as judges, evaluating each entry in terms of its importance to the world of science and research.

According to R&D Magazine, winning an R&D 100 Award provides a mark of excellence known to industry, government, and academia as proof that the product is one of the most innovative ideas of the year. This award recognizes GeneSiC as a global leader in the creation of technology-based products that make a difference in how we work and live.

About GeneSiC Semiconductor, Inc.

GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration. GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense. GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.

Multi-kHz, Ultra-High Voltage Silicon Carbide Thyristors sampled to US Researchers

DULLES, VA, November 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (SiC) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Dr. Ranbir Singh, President of GeneSiC. “GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A Thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.”

Silicon Carbide based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based Thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage power conversion (MVDC), Grid-tied solar inverters, wind power inverters, pulsed power, weapon systems, ignition control, and trigger control. It is now well established that ultra-high voltage (>10kV) Silicon Carbide (SiC) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power.

Dr. Singh continues “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration.

Located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Navy, Army, DARPA, and the Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, fabrication, and testing. To find out more, please visit www.genesicsemi.com.