SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
10 kV SiC BJTs – static, switching and reliability characteristics
Snabbt mogna SiC Junction-transistorer med strömförstärkning (b) > 130, Blockera spänningar upp till 2700 V och stabil långvarig drift
Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
AN-10A Drivning SiC Junction Transistorer (Inc) med Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concep
AN-10B Drivning SiC Junction Transistorer (Inc): Två-nivå Gate Drive Concept
Dubbelpulsomkopplingskort
Dubbelpulsomkopplingskort
High Power Gate Driver Board
High Power Gate Driver Board