SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
10 kV SiC BJTs – static, switching and reliability characteristics
Rask modning av SiC Junction-transistorer med nåværende gevinst (b) > 130, Blokkering av spenninger opp til 2700 V og stabil langvarig drift
Silicon Carbide Junction Transistors og Schottky-likerettere optimalisert for 250 ° C-drift
Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
AN-10A Driving SiC Junction Transistors (SJT) med IGBT-portdrivere av silisium: En-nivå Drive Concep
AN-10B Driving SiC Junction Transistors (SJT): To-nivå Gate Drive-konsept
Dobbel pulsbryter
Dobbel pulsbryter
High Power Gate driverkort
High Power Gate driverkort