Mga Tala sa Aplikasyon:
AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
Oktubre 2010 AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
Oktubre 2010 AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
AN1001 SiC Power Diode Reliability
Setyembre, 2018AN1001 SiC Power Diode Reliability
AN1002 Pag-unawa sa Datasheet ng isang SiC Power Schottky Diode
Setyembre, 2018AN1002 Pag-unawa sa Datasheet ng isang SiC Power Schottky Diode
AN1003 SPICE Model Usage Instructions
Disyembre, 2018AN1003 SPICE Model Usage Instructions
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Fast Neutron Detection With Silicon Carbide Semi-insulating Detectors
Jun, 2008 Fast Neutron Detection With Silicon Carbide Semi-insulating Detectors
Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Oktubre, 2008 Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes
Set, 2010 Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes