Category: Trade Journals

May, 2011 –
1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications

July, 2011 –
1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses

October, 2011 –
Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors

November, 2011 –
SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance

February, 2012 –
SiC: A Rugged Power Semiconductor Compound To Be Reckoned With

February, 2012 –
Silicon Carbide Thyristors usher in the Smart Grid Revolution

March, 2012 –
SiC Electronics: Exploiting High Temperature Promises

July 29, 2013 –
SJTs offer IGBT-driver compatible operation

Sep 5, 2013 –
GeneSiC’s SJTs mentioned as offering lower overall losses than other SiC switches

Oct 28, 2014 –
GeneSiC launches improved, lower on-resistance 1700V and 1200V SiC junction transistors