Category: SJT Technical

Sept, 2011
1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability

Nov, 2011
1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

Feb, 2012
Exploiting the high temperature promise of SiC

Apr, 2012
Silicon Carbide “Super” Junction Transistors Operating at 500°C

May, 2012
Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

May, 2012
SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability

Oct, 2012
Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

May, 2013
10 kV SiC BJTs – static, switching and reliability characteristics

Oct, 2013
Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation

Apr, 2014
Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation