AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
AN1001 SiC Power Diode Reliability
AN1001 SiC Power Diode Reliability
AN1002 Understanding the Datasheet of a SiC Power Schottky Diode
AN1003 SPICE Model Usage Instructions
AN1003 SPICE Model Usage Instructions
Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
Reliability of SiC MOS devices
Reliability of SiC MOS devices