SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
10 kV SiC BJTs – static, switching and reliability characteristics
Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concep
AN-10B Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept
Double Pulse Switching Board
Double Pulse Switching Board
High Power Gate Driver Board
High Power Gate Driver Board