Category: News

Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters

DULLES, VA, May 13, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of 20 mOhm-1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging that enables extremely low Turn-On energies losses while offering flexible, modular designs in high frequency power converters. The use of high frequency, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at high operating frequencies. These devices are targeted for use in a wide variety of applications including induction heaters, plasma generators, fast chargers, DC-DC converters, and switched mode power supplies.

Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offered by GeneSiC are uniquely applicable to inductive switching applications because SJTs are the only widebandgap switch offers >10 microsec repetitive short circuit capability, even at 80% of the rated voltages (eg. 960 V for a 1200 V device). In addition to the sub-10 nsec rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low Gate voltages, unlike other SiC switches.
SiC Schottky Rectifiers used in these mini-modules show low on-state voltage drops, good surge current ratings and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency circuits.
“GeneSiC’s SiC Transistor and Rectifier products are designed and manufactured to realize low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-Bridge, Flyback and multi-level inverters” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.
Product released today include
20 mOhm/1200 V SiC Junction Transistor/Rectifier Co-pack (GA50SICP12-227):
• Isolated SOT-227/mini-block/Isotop package
• Transistor Current Gain (hFE) >100
• Tjmax = 175oC (limited by packaging)
• Turn On/Off; Rise/Fall Times <10 nanoseconds typical.

All devices are 100% tested to full voltage/current ratings. The devices are immediately available from GeneSiC’s Authorized Distributors.

For more information, please visit: https://192.168.88.14/commercial-sic/sic-modules-copack/

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon diode modules. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, downhole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

High Temperature (>210^oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls

DULLES, VA, March 9, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages. These discrete components are designed and manufactured to operate under ambient temperatures of greater than 215^oC. The use of high temperature, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures. These devices are targeted for use in a wide variety of applications including a wide variety of downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies.

High Temperature SiC Junction Transistors (SJT) offered by GeneSiC exhibit sub-10 nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). The transient energy losses and switching times are independent of junction temperature. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by 0/+5 V TTL gate drivers, unlike other SiC switches. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >20 usec short circuit capability, and superior avalanche capability. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.

High Temperature SiC Schottky Rectifiers being offered by GeneSiC show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical.

“GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. These devices offer low conduction losses and high linearity. We design our “SHT” line of rectifiers, to offer low leakage currents at high temperatures. These metal can packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

Products released today include:

240 mOhm SiC Junction Transistors:

• 300 V blocking voltage. Part number GA05JT03-46
• 100 V blocking voltage. Part number GA05JT01-46
• Current Gain (h_FE) >110
• T_jmax = 210^oC
• Turn On/Off; Rise/Fall Times <10 nanoseconds typical.

Up to 4 Ampere High Temperature Schottky diodes:

• 600 V blocking voltage. Part number GB02SHT06-46
• 300 V blocking voltage. Part number GB02SHT03-46
• 100 V blocking voltage. Part number GB02SHT01-46
• Total capacitive charge 9 nC
• T_jmax = 210^oC.

All devices are 100% tested to full voltage/current ratings and housed in metal can TO-46 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon diode modules. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, downhole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit https://192.168.88.14/high-temperature-sic/high-temperature-sic-schottky-rectifiers/; and https://192.168.88.14/high-temperature-sic/high-temperature-sic-junction-transistors/.

Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation

DULLES, V.A., Nov 19, 2014 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of Gate Driver evaluation board and has expanded its design support for the industry’s lowest loss switches – the SiC Junction Transistor (SJT) – with a fully-qualified LTSPICE IV model. Using the new Gate Driver Board, power conversion circuit designers can verify the benefits of sub-15 nanosecond, temperature independent switching characteristics of SiC Junction Transistors, with low driver power losses. Incorporating the new SPICE models, circuit designers can easily evaluate the benefits GeneSiC’s SJTs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

SiC Junction Transistors have significantly different characteristics than other SiC Transistor technologies, as well as Silicon Transistors. Gate Driver boards that can provide low power losses while still offering high switching speeds were needed to provide drive solutions for utilizing the benefits of SiC Junction Transistors. GeneSiC’s fully isolated GA03IDDJT30-FR4 Gate driver board takes in 0/12V and a TTL signal to optimally condition the voltage/current waveforms required to provide small rise/fall times, while still minimizing the continuous current requirement for keeping the Normally-OFF SJT conducting during the on-state. The pin configuration and form factors are kept similar to other SiC transistors. GeneSiC has also released Gerber files and BOMs to end-user to enable them to incorporate the benefits of the driver design innovations realized.

SJTs offer well-behaved on-state and switching characteristics, making it easy to create behavior based SPICE models that agree remarkably well with the underlying physics based models as well. Using well-established and understood physics-based models, SPICE parameters were released after extensive testing with device behavior. GeneSiC’s SPICE models are compared to the experimentally measured data on all device datasheets and are applicable to all 1200 V and 1700 V SiC Junction Transistors released.
GeneSiC’s SJTs are capable of delivering switching frequencies that are more than 15 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

This SiC Junction Transistor SPICE model adds to GeneSiC’s comprehensive suite of design support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement GeneSiC’s comprehensive family of SiC Junction Transistors and Rectifiers into the next generation of power systems.

GeneSiC’s Gate Driver Board datasheets and SJT SPICE models can be downloaded from https://192.168.88.14/commercial-sic/sic-junction-transistors/

SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits

Dulles, Virginia., Oct 28, 2014 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V SiC Junction Transistors in TO-247 packages. The use of high voltage, high frequency, high temperature and low on-resistance capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics applications requiring higher bus voltages. These devices are targeted for use in a wide variety of applications including DC microgrids, Vehicle Fast chargers, server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, Wind power systems, and industrial motor control systems.

SiC Junction Transistors (SJT) offered by GeneSiC exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercially gate drivers, unlike other SiC switches. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >10 usec short circuit capability, and superior avalanche capability

“These improved SJTs offer much higher current gains (>100), highly stable and robust performance as compared to other SiC switches. GeneSiC’s SJTs offer extremely low conduction losses at rated currents as superior turn-off losses in power circuits. Utilizing the unique device and fabrication innovations, GeneSiC’s Transistor products help designers achieve a more robust solution,” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

1700 V SiC Junction Transistor released

• 25 mOhms (GA50JT17-247), 65 mOhms (GA16JT17-247), 220 mOhms (GA04JT17-247)
• Current Gain (h_FE) >90
• T_jmax = 175^oC
• Turn On/Off; Rise/Fall Times <30 nanoseconds typical.

1200 V SiC Junction Transistor released

• 25 mOhms (GA50JT12-247), 120 mOhm (GA10JT12-247), 210 mOhms (GA05JT12-247)
• Current Gain (h_FE) >90
• T_jmax = 175^oC
• Turn On/Off;       Rise/Fall Times <30 nanoseconds typical.

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant TO-247 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

For more information, please visit https://192.168.88.14/commercial-sic/sic-junction-transistors/

GeneSiC’s SiC Transistor and Rectifiers offer significant advantages towards achieving the goals of the Little Box Challenge

State-Of-the Art. Silicon Carbide Power Transistors & Rectifiers. Available. Now!

GeneSiC has a wide portfolio of products available right now worldwide from top distributors

Bare Die Chip form of SiC devices available Directly from factory (please fill the form below)

Discrete SJTs and Rectifiers in Commercial temperature ratings (175° C)

Discrete HiT SJTs and HiT Rectifiers in High Temperature (up to 250° C)

GeneSiC offers the widest variety of SiC products – in packaged products as well as bare-die format to allow greater design flexibility and innovation. GeneSiC is continuously striving to stay ahead by introducing new, innovative products. If you don’t see the exact product you are looking for today, you may see it in the near future.

The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies

Dulles, Virginia., Dec 10, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability through its distributors and directly a family high temperature packaged 600 V SiC Junction Transistors (SJT) in the 3-50 Amperes current ratings in JEDEC industry-standard through hole and surface mount packages. Incorporating these high temperature, low on-resistance, high frequency SiC Transistors in hermetic packages, high temperature solders and encapsulation will increase conversion efficiency and reduce the size/weight/volume of high temperature power conversion applications.

Contemporary high temperature power supply, motor control and actuator circuits used in oil/gas/downhole and aerospace applications suffer from lack of availability of a viable high temperature Silicon Carbide solution. Silicon transistors suffer from low circuit efficiencies and large sizes because they suffer from high leakage currents and low poor switching characteristics. Both these parameters become worse at higher junction temperatures. With thermally constraint environments, junction temperatures rise quite easily even when modest currents are passed. Hermetically packaged SiC transistors offer unique characteristics that promise to revolutionize the capability of downhole and aerospace applications. GeneSiC’s 650 V/3-50 A SiC Junction Transistors feature near zero switching times that does not change with temperature. The 210^oC junction temperature-rated devices offer relatively large temperature margins for applications that are operating under extreme environments.

Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, SiC Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As downhole and aerospace application designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance, reliability and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s SJT products help designers achieve all that in a more robust solution. These products complement the hermetic packaged SiC rectifier released last year by GeneSiC, and the bare die products released earlier this year, while paving the way for us to offer high temperature, low-inductance, power modules in the near future ” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

Isolated TO-257 with 600 V SJTs:

• 65 mOhms/20 Amp (2N7639-GA); 170 mOhms/8 Amp (2N7637-GA); and 425 mOhms/4 Amp (2N7635-GA)
• T_jmax = 210^oC
• Turn On/Off;       Rise/Fall Times <50 nanoseconds typical.
• Corresponding Bare Die GA20JT06-CAL (in 2N7639-GA); GA10JT06-CAL (in 2N7637-GA); and GA05JT06-CAL (in 2N7635-GA)

Non-Isolated TO-258 Prototype package with 600 SJTs

• 25 mOhms/50 Amp (GA50JT06-258 prototype package)
• T_jmax = 210^oC
• Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
• Corresponding Bare Die GA50JT06-CAL (in GA50JT06-258)

Surface Mount TO-276 (SMD0.5) with 600 SJTs

• 65 mOhms/20 Amp (2N7640-GA); 170 mOhms/8 Amp (2N7638-GA); and 425 mOhms/4 Amp (2N7636-GA)
• T_jmax = 210^oC
• Turn On/Off;       Rise/Fall Times <50 nanoseconds typical.

All devices are 100% tested to full voltage/current ratings and housed in hermetic packages. Technical Support and SPICE circuit models are offered. The devices are immediately available from GeneSiC Directly and/or through its Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit https://192.168.88.14/index.php/hit-sic/sjt

High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities

Dulles, Virginia., Nov 19, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of Industry-standard SMB (JEDEC DO-214AA) packaged SiC Rectifiers in the 650 – 3300 V range. Incorporating these high voltage, reverse recovery-free, high frequency and high-temperature capable SiC Diodes will increase conversion efficiency and reduce the size/weight/volume of multi-kV assemblies. These products are targeted towards Micro-solar inverters as well as voltage multiplier circuits used in a wide range of X-Ray, Laser and particle generator power supplies.

Contemporary Micro-solar inverters and voltage multiplier circuits may suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers. At higher rectifier junction temperatures, this situation becomes worse because the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the micro-solar inverters and high voltage assemblies. GeneSiC’s 650 V/1 A; 1200 V/2 A and 3300 V/0.3 A Schottky rectifiers feature zero reverse recovery current that does not change with temperature. The 3300 V-rated devices offer relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. The SMB (DO-214AA) overmolded package features industry-standard form factor for surface mount assemblies.

“These product offerings come from years of sustained development efforts at GeneSiC towards offering compelling devices and packages. We believe the SMB form factor is a key differentiator for the Micro Solar Inverter and Voltage Multiplier market, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Schottky Rectifiers and improved SMB packages enables this breakthrough product” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

1200 V/2 A SMB SiC Schottky Diode (GB02SLT12-214) Technical Highlights

• Typical VF = 1.5 V
• T_jmax = 175^oC
• Reverse Recover Charge = 14 nC.

3300 V/0.3 A SMB SiC Schottky Diode (GAP3SLT33-214) Technical Highlights

• Typical VF = 1.7 V
• T_jmax = 175^oC
• Reverse Recover Charge = 52 nC.

650 V/1 A SMB SiC Schottky Diode (GB01SLT06-214) Technical Highlights

• Typical VF = 1.5 V
• T_jmax = 175^oC
• Reverse Recover Charge = 7 nC.

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant SMB (DO-214AA) packages. Technical Support and SPICE circuit models are offered. The devices are immediately available from GeneSiC’s Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit https://192.168.88.14/index.php/sic-products/schottky

High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages

Thief River Falls/Dulles, Virginia., May 28, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 3300 V/0.3 Ampere SiC Schottky Rectifiers – the GAP3SLT33-220FP. This unique product represents the highest voltage SiC rectifier on the market, and is specifically targeted towards voltage multiplier circuits and high voltage assemblies used in a wide range of X-Ray, Laser and particle generator power supplies.

Contemporary voltage multiplier circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation becomes worse because the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC’s 3300 V/0.3 A Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. The TO-220 Full Pack overmolded isolated package features industry-standard form factor with increased pin spacing in through hole assemblies.

“This product offering comes from years of sustained efforts at GeneSiC. We believe the 3300 V rating is a key differentiator for the high voltage generator market, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Schottky Rectifiers enables this breakthrough product” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

3300 V/0.3 A SiC Rectifier Technical Highlights

• On-state Drop of 1.7 V at 0.3 A
• Positive temperature coefficient on VF
• T_jmax = 175^oC
• Capacitive charge 52 nC (typical).

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard TO-220FP (Full Pack) packages. The devices are immediately available from GeneSiC’s Authorized Distributor, Digikey.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit www.genesicsemi.com

High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching

Dulles, Virginia., Nov 7, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 8000 V SiC PiN Rectifiers; 8000 V SiC Schottky Rectifiers, 3300 V SiC Schottky Rectifiers and 6500 V SiC Thyristors in bare die format. These unique products represents the highest voltage SiC devices on the market, and is specifically targeted towards oil and gas instrumentation, voltage multiplier circuits and high voltage assemblies.

Contemporary ultra-high voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation worsens further since the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC’s 8000 V and 3300 V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. 8000 V PiN Rectifiers offer higher current levels and higher operating temperatures. 6500 V SiC Thyristor chips are also available to accelerate R&D of new systems.

“These products showcase GeneSiC’s strong lead in the development of SiC chips in the multi-kV ratings. We believe the 8000 V rating goes beyond what Silicon devices can offer at rated temperatures, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Rectifiers and Thyristors will enable system level benefits not possible before” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

8000 V/2 A SiC Bare Die PiN Rectifier Technical Highlights

• T_jmax = 210^oC
• Reverse Leakage Currents < 50 uA at 175^oC
• Reverse Recovery Charge 558 nC (typical).

8000 V/50 mA SiC Bare Die Schottky Rectifier Technical Highlights

• Total Capacitance 25 pF (typical, at -1 V, 25^oC).
• Positive temperature coefficient on VF
• T_jmax = 175^oC

6500 V SiC Thyristor Bare Die Technical Highlights

• Three offerings – 80 Amperes (GA080TH65-CAU); 60 Amperes (GA060TH65-CAU); and 40 Amperes (GA040TH65-CAU)
• T_jmax = 200^oC

3300 V/0.3 A SiC Bare Die Rectifier Technical Highlights

• On-state Drop of 1.7 V at 0.3 A
• Positive temperature coefficient on VF
• T_jmax = 175^oC
• Capacitive charge 52 nC (typical).

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit https://192.168.88.14/index.php/hit-sic/baredie