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GeneSiC is developing a new innovative power device, the Super Junction Transistor (SJT). SJTs are "Super-High" current gain SiC BJTs being developed by GeneSiC in 1200 V - 10 kV ratings. The SJTs are gate-oxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operation area (RBSOA) and a slightly positive temperature co-efficient of on-resistance. The SJT is a current controlled device require a small gate current that can be driven by commercial, commonly available gate drivers. Incorporating high voltage, high frequency and high-temperature capable SiC SJTs will increase conversion efficiency and reduce the size/weight/volume of power electronics.

• Highest On-Current SiC Switch
• Normally-OFF
• High Temperature (>225°C) Operation
• Compatible with anti-parallel diode connection
• Low Gate Capacitance
• RF (10's of MHz) switching frequency
• Best in class temperature independent switching and blocking performance
• Lowest Vds(on) of any SiC switch
• Positive coefficient for easy paralleling
• Low gate charge
• Industry's lowest conduction losses
• Improved circuit efficiency
• Lowest switching losses for power switches AND low EMI