Bipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC offer 20-50X lower switching losses as compared to conventional semiconductors, and lower on-state voltage drop for >6 kV ratings. The opportunity of operating a device at a higher current density to increase total current with reasonable yield, the poor reliability of MOS at high temperatures, and the relatively low channel mobilities obtained in SiC MOSFETs may make Thyristor-based devices attractive for >6 kV applications.

GTO Thyristors are especially suitable for Pulsed Power Systems, Railguns and Utility applications.