GeneSiC is developing a new and innovative power device concept, the SuperJFET for voltage ratings of 600 V - 15 kV. Significant advantages of the SuperJFET are:

• Higher current rating as compared to competing SiC switch technologies;
• Higher switching frequency than power MOSFETs;
• Higher current at high temperatures;
• Inherently Radiation-Hard;
• Higher chip yield and hence, lower cost;
• Inherently superior high temperature capability and reliability due to independence from SiC MOS and SiC bipolar drift issues.