Company Profile

GeneSiC is a privately held company with a focus towards high quality SiC devices. The company strives to be a market leader in the design, development and commercialization of SiC devices with the higher performance than those realized by its competitors through innovation, research and developing a better understanding of SiC based devices. While the company continues to win US government sponsored awards for its Research & Development Efforts, it is focused on releasing high volume SiC device products.

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Founder

Dr. Ranbir Singh founded GeneSiC Semiconductor Inc. in 2004. He has developed critical understanding and published on a wide range of SiC power devices including PiN, JBS and Schottky diodes, MOSFETs, IGBTs, Thyristors and field controlled thyristors. He has co-authored over 95 publications in various refereed journals and conference proceedings and is an inventor on 24 issued US patents. He conducted research on SiC power devices first at Cree Inc., and then at the National Institute of Standards and Technology (NIST), Gaithersburg MD.  He has served on the Technical committee of the International Symposium on Power Semiconductor Devices and ICs (ISPSD) from 2002-04, and was part of a panel to develop a roadmap for the insertion of SiC based power devices into commercial applications. In May 2003, and again in May 2004 he received the IEEJ Technical Development Award for the development of ultra high voltage SiC devices. He recieved the B. Tech (Electrical Engineering) degree from Indian Institute of Technology (IIT), Delhi, India. He recieved his MS & PhD degrees from North Carolina State University (NCSU) under the tutelage of power device pioneer Prof. B. Jayant Baliga.

Selected Publications for Dr. Singh:

• Ranbir Singh and B. Jayant Baliga, “Cryogenic Operation of Silicon Power Devices,” Kluwer Academic Press. Boston, Doedrecht, London. 1998.
• Ranbir Singh, “High Power SiC PiN Rectifiers,” International Journal of High Speed Electronics and Systems. Vol 15, no. 4. 2005. pp.867-898. (Bookchapter).

Papers

• R. Singh and M. G. Pecht, "Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices," IEEE Industrial Electronics Magazine. pp. 19-32. September 2008.
• R. Singh, “Reliability and performance limitations in SiC power devices,” Microelectronics and Reliability, vol 46, no. 5-6, pp. 713-730. May-June 2006.
• R. Singh and A. R. Hefner, “Reliability of SiC MOS Devices,” Solid State Electronics, vol 48, no. 10-11, pp. 1717-1720. 2004.
• R. Singh, Sei-Hyung Ryu, D. C. Capell and J. W. Palmour, “High Temperature SiC Trench gate p-IGBTs,” IEEE Transactions on Electron Devices, vol. 50, no. 3, (2003) pp. 774 –784.
• R. Singh, D. C. Capell, M. K. Das, L. A. Lipkin, and J. W. Palmour, “Development of high current 4H-SiC ACCUFET,” IEEE Transactions on Electron Devices, vol. 50, no. 2, (2003) pp. 471 –478.
• R. Singh, D. C. Capell, J. T. Richmond, and J. W. Palmour, “High channel density, 20 A 4H-SiC ACCUFET with Ron,sp = 15 mΩcm²,” IEE Electronics Letters, vol. 39, no. 1, Jan. 2003 pp. 152 –154.
• R. Singh, D. C. Capell, J. J. Sumakeris and St. G. Mueller, “PiN Rectifiers and Bipolar switches in 4H-SiC” Mat. Res. Soc. Symp. Proc., Paper K 7.2. Materials Research Society Fall Meeting, 2002. Invited Presentation.
• R. Singh, Kenneth G. Irvine, D. C. Capell, James T. Richmond, David Berning, A. R. Hefner, and J. W. Palmour, “Large Area, Ultra-high Voltage 4H-SiC p-i-n Rectifiers,” IEEE Transactions on Electron Devices, vol. 49, no. 12, (2002) pp. 2308 –2316.
• R. Singh, D. C. Capell, K. G. Irvine, J. T. Richmond, and J. W. Palmour, “7.4 kV, 330 A (pulsed) single chip, high temperature 4H-SiC pin rectifiers,” IEE Electronics Letters, vol. 38, no. 25, Dec. 2002 pp. 1738 –1740.
• R. Singh, D. C. Capell, A. R. Hefner, J. S. Lai, and J. W. Palmour, “High power 4H-SiC JBS Rectifiers,” IEEE Transactions on Electron Devices, vol. 49, no. 11, (2002) pp. 2054 –2064.
• R. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow, J. W. Palmour, “SiC Power Schottky and PiN Diodes,” IEEE Transactions on Electron Devices, vol. 49, no. 4, (2002) pp. 665 –672.
• R. Singh, “Silicon Carbide Bipolar Power Devices – Potentials and Limits,” Mat. Res. Soc. Symp. Proc. Vol. 640, pp. H4.2.1 – H.4.2.12, Materials Research Society Fall Meeting, Boston, 2001. Invited Presentation.
• R. Singh, S. Ryu, J. W. Palmour, A. R. Hefner, and J. S. Lai, “1500 V, 4 A 4H-SiC JBS Diodes,” Proceedings of IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 22-25 2000. pp. 101-104.
• R. Singh, S-H. Ryu and J W. Palmour, "High Temperature, High Current, 4H-SiC Accu-DMOSFET," International Conference on Silicon Carbide and Related Materials (ICSCRM 1999), Materials Science Forum, vol. 338-342, pt.2, p.1271-1274. 2000. Research Triangle Park, NC.
• R. Singh and J. W. Palmour, “High Temperature, High Current, P-Channel UMOS 4H-SiC IGBT,” Proc. 57th Device Research Conference, pp. 46-47, June 28-30, 1999. Santa Barbara, USA.
• R. Singh, K. G. Irvine, O. Kordina, J. W. Palmour, M. E. Levinshtein, and S. L. Rumyanetsev, “4H-SiC bipolar PiN diodes with >5.5 kV blocking voltage,” Proc. Device Research Conference, Charlottesville, VA, June 22-24, 1998, pp. 86-87.
• R. Singh, K. G. Irvine and J. W. Palmour, “4H-SiC buried gate Field Control Thyristor,” Proc. 55th Device Research Conference, pp. 34-35, June 23-25, 1997. Ft. Collins, USA.
• R. Singh, and J. W. Palmour, “Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields,” Proc. of IEEE International Symposium on Semiconductor Power Devices and ICs (ISPSD), Weimar, Germany, May 26-29, 1997, pp. 157-160.