GeneSiC is targeting low on-state voltage drop Silicon Carbide (SiC) power devices with 2-15 kV, 200oC, 20 kHz ratings as a key enabling technology for next generation advanced utility and military hardware.

GeneSiC Products Relevant for these applications:

• SuperJFET
• Rectifiers
• Thyristor-based devices

Limitations of >4.5 kV Silicon based IGBTs in terms of dI/dt ratings, dV/dt ratings, peak voltage rating, peak switching power and turn-off switching speeds is motivating modern power device community to explore the use of higher performance devices based on SiC.

The immediate application for such devices will include electric utility, directed energy weapon systems, particle accelerators for high energy physics experiments, railbound vehicles, medical, and high power tube-based RADAR systems.